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| www..com ]HALF-BRODGE IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT PRELIMINARY GA150TD120K VCES=1200V VCE(on) typ.=2.5V @VGE=15V,IC=150A Features * * * * * * * Benefits * * * * Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 s Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing Absolute Maximum Ratings Parameter VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC =25oC PD @ TC =85oC TJ TSTG Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 210 150 300 300 300 20 2500 1250 650 -40 to +150 -40 to +125 Units V A V W o C Termal / Mechanical Characteristics Parameter RJC RJC RCS Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module Typ. 0.1 400 Max. 0.10 0.15 4.0 3.0 - Units o C/W N.m g 1 GA150TD120K Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter V(BR)CES VCE(ON) VGE(th) DVGE(th)DTJ gfe ICES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Ttansconductance Collector - to - Emitter Leaking Current Min. 1200 4.5 Typ. 2.5 2.7 -11 201 2.1 1.9 Max. 5.5 2.0 20 2.5 500 Units Conditions VGE=0V, IC=1mA VGE=15V, IC=150A V mV/oC S mA VGE=15V, IC=150A,TJ=125oC IC=1.75mA VCE=VGE, IC=1.75mA VCE=25V, IC=150A VGE=0V, VCE=1200V VGE=0V, VCE=1200V, TJ=125oC VFM IGES Diode Forward Voltage - Maximum Gate - to - Emitter Leakage Current V nA IF=150A , VGE=0V IF=150A , VGE=0V ,TJ=125oC VGE=20V Dynamic Characteristics - TJ=125oC (unless otherwise specified) Parameter Qg Qge Qgc Td(on) tr Td(off) tf Eon Eoff(1) Ets(1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Tsc Total gate charge ( turn - on ) Gate - Emitter charge ( turn - on ) Gate - Collector charge ( turn - on ) Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Turn - On Switching Energy Total Switching Energy Turn - On Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Short circuit withstand time 10 s Min. Typ. 1440 192 377 380 208 412 100 34 18 52 25643 1139 222 186 131 12383 2520 Max. 1710 288 565 70 Units nC Conditions VCC= 400V VGE=15V IC=171A TJ =25oC RG1 =15 , RG2 = 0 nS IC = 150A VCC= 720V VGE=15V mJ VGE = 0V pF nS A nC A/s VCC = 30V f =1MHZ IC = 150A RG1=15 RG2=0 VCC=720V di/dt=1294A/s VCC=720V, VGE=15V Min. RG1=15, VCEP=1100V 2 |
Price & Availability of GA150TD120K
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